Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 846-849Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2909770
Keywords
AlGaN/GaN; HEMT; transitional recessed gate (TRG) technology; l; associated gain; dry etching
Categories
Funding
- Science Challenge Project [TZ2018004]
- China Postdoctoral Science Foundation [2018M640957]
- National Key Research and Development Program of China [2016YFB0400300]
- National Natural Science Foundation of China [61604114, 61574110, 61574112, 61474091, 61106106]
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A high-linearity and high-gain AlGaN/GaN HEMTs with a 100-nm gate were demonstrated. The device employs transitional recessed gate (TRG) along the gate width for millimeter wave power application. The gradually changing gate recess depth was created using transitional dosed photoetching. Accurate etching ensured that the FET-elements have a continued V-ts offset in the local equivalent threshold voltage (V-th) in different areas. The device exhibits a high I-d, (max) of 1.12 A/mm and a high peak extrinsic g(m) of 374 mS/mmwith an improved gate swing > 2.6 V, much higher than that of Fin-HEMT. Excellent RF performance was shown, including f(T)/f(max) = 61.8/148.8 GHz, G(as)/G(linear) = 9.98/12dB at 30 GHz. To the best of our knowledge, this is the best associated gain and linearity performance reported to date for AlGaN/GaN HEMTs. This letter has great potential for high gain and linearity millimeter wave power applications, which are needed for future communication systems.
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