Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 1001-1004Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2914014
Keywords
Analytical model; Maxwell-Boltzmann statistics; tunnel FET; thermal injection method
Categories
Funding
- National Natural Science Foundation of China [61176038, 61474093]
- Technology Development Program of Shaanxi Province [2016GY-075]
- EPSRC [EP/S001131/1] Funding Source: UKRI
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The analytical models for the output characteristics of tunnel FETs (TFETs) based on Maxwell-Boltzmann (MB) statistics have some accuracy issues, especially in linear region of operation, when compared with more sophisticated numerical approaches. In this letter, by exploiting the thermal injection method (TIM), an accurate analytical model for the TFET potential profile is proposed. Although the approach is initially envisaged for heterojunction TFETs (H-TFETs), it could be straightforwardly adopted for homojunction TFETs. After an accurate description of the potential profile is obtained, then, the current is computed by means of a Landauer-like expression. Comparison with the numerical simulations at different bias conditions show that the predicted output characteristics qualitatively improve, leading to a significant enhancement in accuracy at a much less-computational cost.
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