Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 909-912Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2912032
Keywords
Tin oxide; SnO2; transistor; UV irradiation
Categories
Funding
- Ministry of Science and Technology of Taiwan
Ask authors/readers for more resources
Using a novel ultraviolet (UV) irradiation method, we processed a high-performance thin-film transistor (TFT) at low temperatures. Satisfactory device integrity that was demonstrated by high field-effect mobility values of 92 and 43 cm(2)/Vs, small subthreshold slopes of 74 and 81 mV/decade, and ON-current/OFF-current values of 3 x 10(6) and 7 x 10(5) was achieved for the SnO2 TFT at low processing temperatures of 180 degrees C and 100 degrees C, respectively. The results of X-ray photoelectron spectroscopy showed that the UV irradiation considerably increased the presence of Sn4+ and reduced the presence of unwanted Sn2+, even at low processing temperatures, improving the quality of SnO2.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available