Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 993-996Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2912413
Keywords
Ultrathin; ferroelectric; negative capacitance FET; PFM analysis
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Funding
- Berkeley Center for Negative Capacitance Transistors
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We report on negative capacitance FETs (NCFETs) with a 1.8-nm-thickZr-doped HfO2 gate oxide layer fabricated on an FDSOI wafer. Hysteresis-free operation is demonstrated. When compared to a baseline that uses HfO2 gate oxide with the same thickness, a subthreshold swing (SS) steeper by more than 20 mV/decade and larger than 10X reduction in the OFF current (I-OFF) is observed at 30-nm channel length at constant I-ON. On the other hand, at matched I-OFF, the NCFET provides a larger ON current at constant V-DD. Our results indicate that the beneficial characteristic offered by the NCFETs can be obtained at scaled channel lengths, while using oxide layers whose thickness is comparable to the high-K oxide layer used in ultra-scaled nodes.
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