Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 6, Pages 866-869Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2910598
Keywords
SiC JFET; normally-off; ion implantation
Categories
Funding
- Super Cluster Program from the Japan Science and Technology Agency
Ask authors/readers for more resources
We demonstrate normally-off 400 degrees C operation of n-channel and p-channel junction field-effect transistors (JFETs) fabricated by an ion implantation into a common high-purity semi-insulating silicon carbide (SiC) substrate. The side-gate structure proposed in this letter has good controllability of threshold voltage. The present results assure the potential of JFET-based complementary logic integrated circuits (ICs) operational at high temperature.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available