Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ.cm2 grown by MIST EPITAXY®

Thin-film corundum-structured gallium oxide (alpha-Ga2O3) Schottky barrier diodes (SBDs) were fabricated by growing alpha-Ga2O3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY (R) technique, followed by lifting off the alpha-Ga2O3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 m Omega.cm(2) and 531V (SBD1) or 0.4 m Omega.cm(2) and 855V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with alpha-Ga2O3. (C) 2016 The Japan Society of Applied Physics