Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.095201
Keywords
-
Categories
Funding
- CREST
- Japan Science and Technology Agency
- Ministry of Education, Culture, Sports, Science and Technology of Japan [25246010, 16H00898, 16H06331]
- Institute of Advanced Energy, Kyoto University
- Joint Research Program on Zero-Emission Energy Research
- Grants-in-Aid for Scientific Research [16H06331, 16H00898, 25246010] Funding Source: KAKEN
Ask authors/readers for more resources
Using the density functional theory, we study the geometric and electronic structures of a GaN sheet possessing a honeycomb network. The sheet preserves the planar conformation under an equilibrium lattice constant of 3.2 angstrom, and has a semiconducting electronic structure with an indirect band gap of 2.28 eV. The biaxial compressive strain causes structural buckling, leading to polarization normal to the atomic layer. An external electric field normal to the layer also induces structural buckling with a height proportional to the field strength. The polarity of the buckled GaN sheet is tunable by attaching H atoms on Ga and N atoms. (C) 2016 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available