Self-organization of polarization-dependent periodic nanostructures embedded in III-V semiconductor materials

Space-selective nanostructuring inside various III-V semiconductor materials containing gallium element has been accomplished by focused irradiation of IR femtosecond laser pulses. To elucidate the formation mechanisms of periodic nanostructures, we systematically classified III-V semiconductor materials in which polarization-dependent periodic nanostructure can be formed. Self-organization of the periodic nanostructures could be induced empirically only if it is indirect bandgap semiconductor, namely GaP.