Journal
APPLIED PHYSICS LETTERS
Volume 114, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5100240
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [11674132, 11804127]
- Qing Lan Project in Jiangsu province
- Science and technology planning project of Xuzhou [KH17019]
Ask authors/readers for more resources
We propose a van der Waals heterostructure CuInP2S6/germanene by combining two dimensional ferroelectric semiconductor CuInP2S6 with germanene. By density functional theory calculations, we find that the metal-semiconductor transition can be realized in the CuInP2S6/germanene heterostructure by controlling the ferroelectric polarization direction. CuInP2S6 induces the sublattice imbalance of germanene by interface interaction and thus makes it become a normal semiconductor. Then, two opposite ferroelectric polarization states in CuInP2S6/germanene lead to a different band alignment and finally determine its metallic or semiconductor properties. Large transition barriers from ferroelectric to antiferroelectric phases ensure its stability at room temperature. This is a pure electric field controlled metal-semiconductor transition, which has great application potential for exploring nonvolatile ferroelectric switches and memory devices.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available