Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5109317
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Funding
- Japan Society for the Promotion of Science (JSPS) KAKENHI [17K17801, 17K19054]
- Murata Science Foundation
- Kyosho Hatta Foundation
- Center for Spintronics Research Network (CSRN) of Tohoku University
- Research Center for Materials Backcasting Technology, School of Engineering, Nagoya University
- Grants-in-Aid for Scientific Research [17K19054, 17K17801] Funding Source: KAKEN
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We report electrical current switching of noncollinear antiferromagnetic (AFM) Mn3GaN/Pt bilayers at room temperature. The Hall resistance of these bilayers can be manipulated by applying a pulse current of 1.5x10(6) A/cm(2), whereas no significant change is observed up to similar to 10(8) A/cm(2) in Mn3GaN single films, indicating that the Pt layer plays an important role. In comparison with ferrimagnetic Mn3GaN/Pt bilayers, a lower electrical current switching of noncollinear AFM Mn3GaN is demonstrated, with a critical current density two orders of magnitude smaller. Our results highlight that a combination of a noncollinear AFM antiperovskite nitride and a spin-torque technique is a good platform for AFM spintronics.
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