Journal
APPLIED PHYSICS LETTERS
Volume 115, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5100128
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Funding
- Science, Technology and Innovation Commission of ShenZhen Municipality [JCYJ20170307093155685]
- National Natural Science Foundation of China [61774098]
- Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
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Bipolar plasticity for synaptic emulation of indium gallium zinc oxide thin-film transistors (TFTs) with HfOxNy-HfO2-HfOxNy sandwich-stack films as the gate dielectric was investigated. The postsynaptic current increased when a negative pulse train was applied to the gate of TFTs; when a positive pulse was applied, the postsynaptic current was reduced. This result is discussed based on the charge trapping/releasing process with the assistance of ferroelectric behavior of the enwrapped oxygen-deficient-HfO2 layer. The dual response of this synaptic transistor shows promising prospect in the mimicking of biological neurons. Published under license by AIP Publishing.
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