Journal
APPLIED PHYSICS EXPRESS
Volume 12, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1882-0786/ab2e37
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan through its Program for research and development of next-generation semiconductor to realize energy-saving society
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InGaN/GaN quantum wells (QWs) on GaN nanowire are expected for applications in high efficiency optoelectronic devices. To improve efficiency, it is important to clarify the relation between optical and structural properties. A systematical optical and structural characterization of QWs in core-shell GaN nanowires is performed by cathodoluminescence and scanning transmission electron microscopy. The QWs grown on the m-facet show varied optical behavior with respect to height position: main-body region (2.82 similar to 3.10 eV), upper region (3.26 eV), and corner region (2.88 similar to 3.20 eV). The variant luminescence behaviors are attributed to interface quality and In diffusion. (C) 2019 The Japan Society of Applied Physics
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