Journal
ADVANCED MATERIALS
Volume 31, Issue 35, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201902618
Keywords
field-effect transistors (FETs); perovskite; single crystals
Categories
Funding
- Ministry of Science and Technology of China [2016YFB0401100, 2017YFA0204704]
- National Natural Science Foundation of China [21805284, 21873108]
- Chinese Academy of Sciences (Hundred Talents Plan, Youth Innovation Promotion Association)
- Strategic Priority Research Program [XDB30000000, XDB12030300]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/M005141/1]
- Royal Society through a Newton Fellowship
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Optoelectronic devices based on metal halide perovskites, including solar cells and light-emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic-inorganic hybrid perovskite materials can enable high-performance, solution-processed field-effect transistors (FETs) for next-generation, low-cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single-crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source-drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such ideal interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom-contact, bottom-gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single-crystal FETs with high mobility of up to approximate to 15 cm(2) V-1 s(-1) at 80 K. This work addresses one of the key challenges toward the realization of high-performance solution-processed perovskite FETs.
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