Journal
ADVANCED MATERIALS
Volume 31, Issue 35, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201903615
Keywords
adlayer-free; chemical vapor deposition (CVD); Cu(111); folds; single crystal graphene
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Funding
- Hong Kong Research Grants Council [600113] Funding Source: Medline
- National Research Foundation of Korea [2016K1A1A2912707] Funding Source: Medline
- UNIST [1.180066.01] Funding Source: Medline
- IBS [R019-D1] Funding Source: Medline
- Research Grants Council, University Grants Committee [600113] Funding Source: Medline
- National Research Foundation of Korea [2016K1A1A2912707, IBS-R019-D1-2019-A00] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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To date, thousands of publications have reported chemical vapor deposition growth of single layer graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long approximate to 100 nm wide folds, separated by 20 to 50 mu m, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.
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