4.8 Article

Quantum-Hall to Insulator Transition in Ultra-Low-Carrier-Density Topological Insulator Films and a Hidden Phase of the Zeroth Landau Level

Journal

ADVANCED MATERIALS
Volume 31, Issue 36, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.201901091

Keywords

quantum Hall effect; quantum Hall to insulator transition; scaling analysis; topological insulator thin-films; zeroth Landau level

Funding

  1. DOE [DE-AC02-76SF00515, DE-AC02-98CH10886] Funding Source: Medline
  2. Gordon and Betty Moore Foundation [GBMF4418] Funding Source: Medline
  3. Gordon and Betty Moore Foundation's [GBMF4418] Funding Source: Medline
  4. National Science Foundation [ECCS-1542152, EFMA-1542798, DMR-1157490] Funding Source: Medline
  5. U.S. Department of Energy [DE-AC02-76SF00515, DE-AC02-98CH10886] Funding Source: Medline

Ask authors/readers for more resources

A key feature of the topological surface state under a magnetic field is the presence of the zeroth Landau level at the zero energy. Nonetheless, it is challenging to probe the zeroth Landau level due to large electron-hole puddles smearing its energy landscape. Here, by developing ultra-low-carrier density topological insulator Sb2Te3 films, an extreme quantum limit of the topological surface state is reached and a hidden phase at the zeroth Landau level is uncovered. First, an unexpected quantum-Hall-to-insulator-transition near the zeroth Landau level is discovered. Then, through a detailed scaling analysis, it is found that this quantum-Hall-to-insulator-transition belongs to a new universality class, implying that the insulating phase discovered here has a fundamentally different origin from those in nontopological systems.

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