Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 26, Pages 23152-23159Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b03873
Keywords
chloride doping tin oxide; interfacial passivation; open-circuit voltage; perovskite solar cells
Funding
- National Natural Science Foundation of China [11674252]
- Special Funds for the Development of Strategic Emerging Industries in Shenzhen [JCYJ20170818113036217]
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The open-circuit voltage deficit is one of the main limiting factors for the further performance improvement in planar structured perovskite solar cells. In this work, we elaborately develop chlorine binding on the surface of tin oxide electron transport layer for a high open-circuit voltage device (1.195 V). The chlorine passivation on SnO2 not only effectively mitigates the interfacial charge recombination between SnO2 and perovskite but also enhances the binding of chlorine with lead at the SnO2/perovskite interface. The chlorine-passivated SnO2 electron transport layer exhibits a better energy alignment with the perovskite layer and an improved electron mobility, which will promote efficient electron transfer at the interface. In addition, the elevated Fermi level of SnO2 electron transport layer increases carrier extraction and suppresses interfacial recombination, which is responsible for the open-circuit voltage enhancement. Planar perovskite solar cells with chlorine-passivated SnO2 exhibit a higher open-circuit voltage of 1.195 V than that of reference ones (1.135 V) for a lower band gap of 1.58 eV perovskite absorbers, which achieve a power conversion efficiency of 20% with negligible hysteresis.
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