Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 30, Pages 27104-27111Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b04361
Keywords
organic thin-film transistors; hybrid dielectrics; self-assembled monolayers; DPh-BTBT; substrate temperature; turn-on voltage
Funding
- German Research Foundation (DFG) [KL 2223/6-1, KL 2223/6-2, KL 2223/7-1, INST 35/1429-1 (SFB 1249)]
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The properties of organic thin-film transistors (TFTs) and thus their ability to address specific circuit design requirements depend greatly on the choice of the materials, particularly the organic semiconductor and the gate dielectric. For a particular organic semiconductor, the TFT performance must be reviewed for different combinations of substrates, fabrication conditions, and the choice of the gate dielectric in order to achieve the optimum TFT and circuit characteristics. We have fabricated and characterized organic TFTs based on the small-molecule organic semiconductor 2,7-diphenyl[1]-benzothieno[3,2-b][1]benzothiophene in combination with an ultrathin hybrid gate dielectric consisting of aluminum oxide and a self-assembled monolayer. Fluoroalkylphosphonic acids with chain lengths ranging from 6 to 14 carbon atoms have been used to form the self-assembled monolayer in the gate dielectric, and their influence on the TFT characteristics has been studied. By optimizing the fabrication conditions, a turn-on voltage of 0 V with an on/off current ratio above 106 has been achieved, in combination with charge-carrier mobilities up to 0.4 cm(2)/V s on flexible plastic substrates and 1 cm(2)/V s on silicon substrates.
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