Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 25, Pages 22834-22839Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b04431
Keywords
InGaN; MQW; photoluminescence; V-pit; composition; strain; homogeneity; scanning X-ray diffraction microscopy
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InGaN/GaN double heterostructures and multiquantum wells (MQWs) have been successfully developed since more than 20 years for LED lightning applications. Recent developments show that state-of-the-art LEDs benefit from artificially generated V-pit defects. However, the control of structural and chemical properties plays a tremendous role. In this paper, we report on the lateral distribution of V-pit defects and photoluminescence of InGaN/GaN MQWs grown on thick GaN on patterned sapphire substrates. The synchrotron-based scanning X-ray diffraction microscopy technique K-map was employed to locally correlate these properties with the local tilt, strain, and composition of the InGaN/GaN MQW. Compositional fluctuation is the main factor for the variation of photoluminescence intensity and broadening. In turn, V-pit defects align along small-angle grain boundaries and their strain fields are identified as a reason for promoting the InGaN segregation process on a microscale.
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