Journal
PHYSICAL REVIEW MATERIALS
Volume 3, Issue 5, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevMaterials.3.054602
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Funding
- Fonds National de la Recherche Luxembourg (FNR) through the GALDOCHS project [C14/MS/8302176]
- European Commission [713640]
- Luxembourg Institute of Science and Technology
- Max Planck Institut fur Eisenforschung
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Dopant atoms captured by vacancies are known to obstruct vacancy-mediated atomic diffusion. Yet, there are cases where the opposite behavior has been reported. Here, Na doping in Cu(In,Ga)Se-2 is shown to enhance or impede the interdiffusion of In and Ga, depending on the relative concentration of Na and Cu. The experimental study suggests that doping a host material may enhance heteroatom diffusivities if (i) dopant migration occurs through the Frank-Turnbull mechanism and (ii) there is overlap between the (cationic/anionic) migration sublattices of dopant and heteroatom. Under such conditions a migration catalysis may occur at sufficiently low dopant concentrations, despite the decreased absolute concentration of point defects responsible for heteroatom diffusion. Herein, a mechanism of doping-assisted catalytic migration is presented.
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