Journal
MATERIALS RESEARCH EXPRESS
Volume 6, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/ab1d38
Keywords
buffer Layer; ZnS; thermal treatments; solar cells; conversion efficiency
Categories
Funding
- Instituto Politecnico Nacional [SIP 20180398, SIP 20180439, SIP 20181289]
- CNMN-Instituto Politecnico Nacional
- RCUK-CONACyT
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The n-type CdS is commonly used as a window layer on photovoltaic solar cells, but CdS has disadvantages such as a direct band gap of 2.4 eV that reduces the photons collection in the UV range. As an alternative solution, ZnS (with a band gap value between 3.6 eV and 3.9 eV) thin film was implemented in the photovoltaic devices as a buffer layer to try to solve the problem. ZnS thin films were grown by chemical bath deposition (CBD) technique and thermally treated on Air, Argon, Oxygen and CdCl2 atmospheres to improve their optoelectronic properties. CdCl2 treatment formed a ZnxCd1-xS ternary compound. In this work, physical properties of ZnS thin films as deposited and thermally treated were studied; on the other hand, ZnS/CdS and ZnxCd1-xS/CdS junctions are implemented in CdTe solar. Experimental and simulated I-V curves were fitted and analyzed.
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