4.6 Article

Highly Integrated MEMS Magnetic Sensor Based on GMI Effect of Amorphous Wire

Journal

MICROMACHINES
Volume 10, Issue 4, Pages -

Publisher

MDPI
DOI: 10.3390/mi10040237

Keywords

MEMS; amorphous wire; GMI magnetic sensor; high integrated

Funding

  1. project of NSAF [U1630119]

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In this paper, a highly integrated amorphous wire Giant magneto-impedance (GMI) magnetic sensor using micro electron mechanical system (MEMS) technology is designed, which is equipped with a signal conditioning circuit and uses a data acquisition card to convert the output signal of the circuit into a digital signal. The structure and package of the sensor are introduced. The sensor sensing principle and signal conditioning circuit are analyzed. The output of the sensor is tested, calibrated, and the relationship between the GMI effect of the amorphous wire and the excitation current frequency is explored. The sensor supplies voltage is +/- 5 V, and the excitation signal is a square wave signal with a frequency of 60 MHz and an amplitude of 1.2 V generated by the quartz crystal. The sensor has the largest GMI effect at 60 MHz with a sensitivity of 4.8 V/Oe and a resolution of 40 nT.

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