4.5 Article

Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics

Journal

IEEE JOURNAL OF PHOTOVOLTAICS
Volume 9, Issue 3, Pages 888-892

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JPHOTOV.2018.2877982

Keywords

Cadmium telluride; conduction band offset; interface; MgxZn1-xO (MZO); thin-film solar cells

Funding

  1. U.S. Department of Energy (DOE) [DE-AC36-08GO28308]
  2. U.S. DOE Office of Energy Efficiency and Renewable Energy
  3. Solar Energy Technologies office

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MgxZn1-xO (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current-voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29mA/cm(2) and efficiency above 16% are demonstrated.

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