Journal
ADVANCED OPTICAL MATERIALS
Volume 7, Issue 15, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900036
Keywords
dual-band; kink states; photonic topological insulators; valley-Hall
Categories
Funding
- National Natural Science Foundation of China [61625502, 61574127, 61801426]
- Top-Notch Young Talents Program of China
- Fundamental Research Funds for the Central Universities
- Innovation Joint Research Center for Cyber-Physical-Society System
- Singapore Ministry of Education [MOE2018-T2-1-022(S), MOE2015-T2-1-070, MOE2016-T3-1-006, Tier 1 RG174/16 (S)]
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Extensive researches have revealed that valley, a binary degree of freedom (DOF), can be an excellent candidate of information carrier. Recently, valley DOF is introduced into photonic systems, and several valley-Hall photonic topological insulators (PTIs) are experimentally demonstrated. However, in the previous valley-Hall PTIs, topological kink states only work at a single frequency band, which limits potential applications in multiband waveguides, filters, communications, and so on. To overcome this challenge, here a valley-Hall PTI, where the topological kink states exist at two separated frequency bands, is experimentally demonstrated in a microwave substrate-integrated circuitry. Both the simulated and experimental results demonstrate the dual-band valley-Hall topological kink states are robust against the sharp bends of the internal domain wall with negligible intervalley scattering. This work may pave the way for multichannel substrate-integrated photonic devices with high efficiency and high capacity for information communications and processing.
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