4.6 Review

Multicolor Semiconductor Lasers

Journal

ADVANCED OPTICAL MATERIALS
Volume 7, Issue 17, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900071

Keywords

multicolor lasers; Q factor; semiconductor lasers; lasing threshold; emission wavelength

Funding

  1. Natural Science Foundation of China [61635001, 61474040, 51525202, 61574054]
  2. NSF of Hunan Province [2018JJ1005]
  3. Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
  4. Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scholars of the National Natural Science Foundation of China [61528403]
  5. Fundamental Research Funds for the Central Universities

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The ever-increasing demand for information density and accuracy in highly integrated photonic devices calls for miniaturization of a coherent light source with broadband tunability and high stability. Wavelength tuning range, cavity Q factor, and threshold are three indicators of evaluating the performance of a nanoscale laser. Herein, the latest, effective materials and fundamental structures for multicolor semiconductor lasers including low dimensional II-VI semiconductors, III-V semiconductors, and lead halide perovskites are reviewed. Composition and bandgaps, novel cavity designs, lasing wavelength, Q factors of resonators, and lasing thresholds of the multicolor semiconductor lasers are compared and discussed. Finally, a summary and a future perspective of broadband tunable semiconductor lasers are given.

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