Journal
ADVANCED OPTICAL MATERIALS
Volume 7, Issue 17, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201900071
Keywords
multicolor lasers; Q factor; semiconductor lasers; lasing threshold; emission wavelength
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Funding
- Natural Science Foundation of China [61635001, 61474040, 51525202, 61574054]
- NSF of Hunan Province [2018JJ1005]
- Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
- Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scholars of the National Natural Science Foundation of China [61528403]
- Fundamental Research Funds for the Central Universities
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The ever-increasing demand for information density and accuracy in highly integrated photonic devices calls for miniaturization of a coherent light source with broadband tunability and high stability. Wavelength tuning range, cavity Q factor, and threshold are three indicators of evaluating the performance of a nanoscale laser. Herein, the latest, effective materials and fundamental structures for multicolor semiconductor lasers including low dimensional II-VI semiconductors, III-V semiconductors, and lead halide perovskites are reviewed. Composition and bandgaps, novel cavity designs, lasing wavelength, Q factors of resonators, and lasing thresholds of the multicolor semiconductor lasers are compared and discussed. Finally, a summary and a future perspective of broadband tunable semiconductor lasers are given.
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