Journal
SCIENTIFIC REPORTS
Volume 9, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/s41598-019-42706-9
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Funding
- Ministry of Science and Technology of Taiwan [107-2923-E-009-001-MY3]
- Russian Science Foundation [18-49-08001]
- Russian Science Foundation [18-49-08001] Funding Source: Russian Science Foundation
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Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si combination forms a N+IP+ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 x 10(4) was measured at room temperature. A favorable retention memory window of 1.2 x 10(3) was attained for 10(4)s at 85 degrees C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiOx was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
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