Journal
OPTICAL MATERIALS EXPRESS
Volume 9, Issue 5, Pages 2131-2146Publisher
OPTICAL SOC AMER
DOI: 10.1364/OME.9.002131
Keywords
-
Categories
Funding
- Office of the Assistant Secretary for Research and Technology (OST-R) [FA8702-15-D-0001]
Ask authors/readers for more resources
The development of higher-power InGaN-based diode lasers facilitates their application to optical pumping of Ti:sapphire lasers. Recent diode-pumping results highlight some unexpected behavior, specifically with 450-nm-wavelength devices. To better understand this we have measured and characterized, over a wide range of doping levels, the absorption properties of Ti:sapphire crystals. We find significant changes in the spectral shape of the pumping band in Ti:sapphire with increased doping, and explain the results in terms of absorption due to pairs of Ti3+ ions. Our subsequent discussion attempts to explain prior data, and also provides guidance on optimizing designs for InGaN-diode-pumped Ti:sapphire lasers. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
