Journal
MATERIALS
Volume 12, Issue 7, Pages -Publisher
MDPI
DOI: 10.3390/ma12071056
Keywords
rhenium sulfide; atomic layer deposition; plasma-enhanced atomic layer deposition; X-ray photoelectron spectroscopy
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Funding
- NEWLIMITS, a center in nCORE, a Semiconductor Research Corporation (SRC) program - NIST [70NANB17H041]
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We report an excellent growth behavior of a high- dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S-O bonds presents an effective route for a uniform and conformal high- dielectric for advanced devices based on 2D materials.
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