Journal
MATERIALS
Volume 12, Issue 8, Pages -Publisher
MDPI
DOI: 10.3390/ma12081282
Keywords
Pt; Ag; ZnO:Li; Pt; Ti memory device; Li-doped ZnO thin films; resistive switching characteristics; magnetron sputtering
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Funding
- National Natural Science Foundation of China [61471159, 61006057]
- Special Funds for Science and Technology Innovation Talents of Harbin in China [2016RAXXJ016]
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A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 10(4) s. In addition, the device can sustain an excellent endurance more than 10(3) cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.
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