Journal
BEILSTEIN JOURNAL OF NANOTECHNOLOGY
Volume 10, Issue -, Pages 1125-1130Publisher
BEILSTEIN-INSTITUT
DOI: 10.3762/bjnano.10.112
Keywords
metal oxide; photo-induced instabilities; photon energy; thermal annealing; thin-film transistor (TFT) device
Funding
- National Key Research and Development Program of China [2016YFA0202403]
- National Nature Science Foundation of China [61674098, 91733301]
- Natural Science Foundation of Shaanxi Provincial Department of Education [2017KW-023, 2017JM6020]
- Fundamental Research Funds for the Central Universities [GK201903052]
- 111 Project [B14041]
- Chinese National 1000-talent-plan program [111001034]
- JSPS KAKENHI [16K06309]
- Changjiang Scholar and the Innovative Research Team [IRT_14R33]
Ask authors/readers for more resources
This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature treatment maintains a high density of defects in the IGZO bulk, whereas high-temperature annealing causes a quality degradation of the adjacent interfaces. Light of short wavelengths below 460 nm induces defect generation in the forward measurement and the leakage current increases in the reverse measurement, especially for the low-temperature-annealed device. The hysteresis after negative-bias-illumination-stress (NBIS) is quantitatively investigated by using the double-scan mode and a positive gate pulse. Despite the abnormal transfer properties in the low-temperature-treated device, the excited holes are identically trapped at the front interface irrespective of treatment temperature. NBIS-induced critical instability occurs in the high-temperature-annealed TFT.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available