Journal
THIN SOLID FILMS
Volume 684, Issue -, Pages 31-35Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2019.05.046
Keywords
Bismuth selenide; Thin films; Thermal evaporation; Thickness; Seebeck coefficient; Hall coefficient; Electrical conductivity; Quantum size effect; Topological insulator
Categories
Funding
- Ukrainian Ministry of Education and Science [M3925]
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The objects of the present study were thin n-Bi2Se3 films with thicknesses d = 10-100 nm, grown by thermal evaporation of n-Bi2Se3 crystals in vacuum onto heated glass substrates. The room temperature d-dependences of the Seebeck coefficient, the Hall coefficient, and the electrical conductivity of the films exhibited an oscillatory behavior, which we attribute to quantum size effects. Such interpretation of the results is supported by the fact that experimentally determined values of the oscillation period are in quite good agreement with the theoretically calculated ones. We suggest that the large amplitude and undamped character of the oscillations in the studied range of thicknesses are connected with the topologically protected gapless surface states of Bi2Se3. The observed oscillatory character of the d-dependences of the transport coefficients should be taken into account when 2D-structures are applied in nanothermoelectricity and other fields of nanoscience and nanotechnology.
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