Journal
THIN SOLID FILMS
Volume 675, Issue -, Pages 109-114Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2019.02.016
Keywords
Silicon nitride; Passivated contact; Passivation; Solar cells
Categories
Funding
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministry of Trade, Industy & Energy (MOTIE) of the Republic of Korea [20163010012430, 20163030014020]
- Human Resources Program in Energy Technology of the Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Ministy of Trade, Industry and Energy, Republic of Korea [20154030200760]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20163030014020, 20163010012430] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Silicon nitride (SiNx:H) films are generally used as passivation and anti-reflection layers in solar cells, and they are usually made by plasma-enhanced chemical vapor deposition (PECVD). Silicon nitride could act as a hydrogen diffusion source, and it also plays a role in chemical passivation. In this study, we investigated the improvement of the passivation characteristics of the passivated contact structure by a PECVD SiNx:H hydrogenation process and the characteristics of SiNx: H for improving the passivation characteristics. It was confirmed that the passivation characteristics cannot be predicted only by the mass density of the SiNx:H film, and the chemical bonding ratio in the SiNx: H thin film is also important. In addition, higher passivation characteristics can be obtained when SiNx: H thin films with higher S-H bond concentration and dominant N2Si-H-2 bonds are used.
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