Journal
SENSORS AND ACTUATORS B-CHEMICAL
Volume 287, Issue -, Pages 147-156Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2019.02.046
Keywords
Ga2O3-WO3; Heterostructures; Atomic layer deposition; Chemical sensors
Funding
- Gent University Global Campus, South Korea
- Gent University BOF Grant [BOF17/STA/015]
- 100 Talents Program of Shanxi province, P.R. China
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Wafer-scale ultra-thin WO3 nanofilms, Ga2O3 nanofilms and Ga2O3-WO3 heterostructures with thickness of approximately (similar to)8.0 nm were fabricated on the SiO2/Si substrates by atomic layer deposition (ALD) technique for their subsequent usage as sensing materials for the ethanol detection. Structure and morphology of the developed ultra-thin samples were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, etc. Sensing properties of the developed ultra-thin nanostructures were investigated at the different temperatures and ethanol concentrations. The results showed that Ga2O3-WO3 heterostructures based gas sensor exhibited about 4 and 10-fold improvement in the response to ethanol compared to that of WO3 and Ga2O3 nanofilms at 275 degrees C. Furthermore, the sensor based on Ga2O3-WO3 heterostructures exhibited shorter response/recover time and excellent selectivity towards ethanol. ALD fabrication method provides a great potential for improvement of the sensing capabilities of high-performance gas sensor based on Ga2O3-WO3 heterostructures.
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