Journal
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
Volume 116, Issue 16, Pages 7703-7711Publisher
NATL ACAD SCIENCES
DOI: 10.1073/pnas.1821612116
Keywords
diamond; boron; defects; semiconductor; high pressure
Categories
Funding
- National Science Foundation of China [11804184]
- US National Science Foundation (NSF) [DMR-1508577]
- David and Lucile Packard Foundation
- Alexander von Humboldt Foundation
- Department of Energy (DOE) through the Capital/DOE Alliance Center
- DOE, Basic Energy Sciences [DE-SC0019114]
- Soft and Hybrid Nanotechnology Experimental Resource (NSF) [ECCS-1542205]
- Materials Research Science and Engineering Centers program (NSF) at the Materials Research Center [DMR-1121262]
- International Institute for Nanotechnology (IIN)
- Keck Foundation
- State of Illinois through the IIN
- DFG [INST 91/315-1 FUGG]
- DOE-National Nuclear Security Administration [DE-NA0001974]
- NSF
- DOE Office of Science User Facility [DE-AC02-06CH11357]
- U.S. Department of Energy (DOE) [DE-SC0019114] Funding Source: U.S. Department of Energy (DOE)
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Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (similar to 0.778 x 10(21) cm(-3)) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer similar to 1-1.5 mu m thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B-O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.
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