Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume 445, Issue -, Pages 1-7Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.nimb.2019.02.023
Keywords
Gallium Nitride synthesis; Nitrogen ion implantation into Gallium; Arsenide; Ion Beam Synthesis; Rutherford Backscattering Spectrometry; Transmission Electron Microscopy
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Funding
- Brazilian agency Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior [CAPES - Finance Code 001]
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Rutherford Backscattering Spectrometry in random (RBS) and aligned (RBS/C) to GaAs 001-channel, and Transmission Electron Microscopy (TEM) techniques were employed to characterize the GaN nanolayer obtained by Ion Beam Synthesis (IBS). N+ ions at 50 keV were implanted up to a fluence of 3 x 10(17) cm(-2) into a (001) GaAs substrate capped by 125 nm Si3N4 layer obtained by sputtering deposition. N+ implantation was performed with samples held at 450 degrees C, which were subsequently annealed in a temperature range between 550 and 1000 degrees C for 5 min by Rapid Thermal Annealing (RTA) under N-2 flow. TEM demonstrated a layered structure on the as-implanted sample, with N bubbles formed at around Si3N4/GaAs interface. RBS/C analysis carried out on samples annealed at distinct temperatures revealed a threshold temperature of about 850 degrees C to fully convert the as-implanted layered structure into a GaN nanolayer. At this temperature and above, the GaAs implanted side of the former Si3N4/GaAs interface was converted into GaN. As a result, an underneath voids structure was also formed indicating an intense migration of Ga from deeper areas of the GaAs substrate. RBS showed results compatible with a GaN nanolayer rich in N for the 850 degrees C annealing, whose sample also offered canalization (chi(min) = 63%) along the GaAs 001-channel. However, a regression in the crystalline quality (chi(min) = 95%) was observed for the 1000 degrees C anneal.
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