Journal
NANOTECHNOLOGY
Volume 30, Issue 33, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab1c02
Keywords
spin-orbital coupling; spin torque ferromagnetic resonance; second harmonic; spin-orbit torque; Dzyaloshinsky-Moriya interactions (DMIs)
Funding
- National Natural Science Foundation of China [61627813, 61571023]
- International Collaboration Project of China [B16001]
- Postdoctoral Science Foundation of China [2017M610739]
- National Key Technology Program of China [2017ZX01032101]
- VR innovation platform from Qingdao Science and Technology Commission
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Spin-orbit torque (SOT) induced magnetic switching in heavy metal/ferromagnet structures with perpendicular magnetic anisotropy (PMA) is promising for energy efficient spintronic devices. Here, we studied the SOT induced magnetic switching in perpendicular W/Co20Fe60B20/MgO structures. We demonstrated the critical current density for the SOT induced switching is as low as 1.15 x 10(6) A cm(-2) in the presence of an in-plane magnetic field, which is very energy efficient in terms of magnetic switching. We attribute this ultra-efficient magnetic switching to the high spin Hall angle of the W layer and the ultra-low domain wall pinning field of the CoFeB. The SOT induced switching procedure was directly observed by a high-resolution Kerr microscopy. Furthermore, the weak Dzyaloshinsky-Moriya interactions are shown to be favorable for switching. Our experiments physically explained the ultra-efficient SOT induced magnetic switching in W/CoFeB/MgO structures, and direct observation of the switching procedure can improve the comprehensive understanding of this dynamic process and further promote the study of SOT based memory devices.
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