Journal
NANOTECHNOLOGY
Volume 30, Issue 34, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab1ffe
Keywords
black phosphorus; field effect transistors; HfO2
Funding
- National Natural Science Foundation of China [51672246, 51272232]
- National Key Research and Development Program of China [2017YFA0304302]
- Fundamental Research Funds for the Central Universities
Ask authors/readers for more resources
Enhanced on/off ratio, obvious threshold voltage left shift, newly emerging bipolar field effect performance and most importantly, excellent stability in ambient condition have been reported for the HfO2-passivated black phosphorus field effect transistors. Both Raman spectra and x-ray photoelectron spectroscopy (XPS) show a thickness reduction effect after HfO2 passivation, XPS further demonstrates that the formation of P-Hf and P-O chemical bonds contributes to the thinning of layered black phosphorus (BP), in which P-Hf bonds also provide chemical protection for BP flakes from degradation. Atomic force microscopy measures the thickness of the passivation layer and also verifies the stability of the passivated BP flakes.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available