Journal
NANO LETTERS
Volume 19, Issue 6, Pages 3999-4003Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b01327
Keywords
Nonvolatile memories; freestanding; oxides; ferroelectric tunnel junctions; pick and place
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Funding
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4415]
- Air Force Office of Scientific Research (AFOSR) Hybrid Materials MURI [FA95.50-18-1-0480]
- Stanford Geballe Laboratory for Advanced Materials (GLAM) Postdoctoral Fellowship program
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Crystalline oxide ferroelectric tunnel junctions enable persistent encoding of information in electric polarization, featuring nondestructive readout and scalability that can exceed current commercial high-speed, nonvolatile ferroelectric memories. However, the well-established fabrication of epitaxial devices on oxide substrates is difficult to adapt to silicon substrates for integration into complementary metal-oxide-semiconductor electronics. In this work, we report ferroelectric tunnel junctions based on 2.8 nm-thick BaTiO3 films grown epitaxially on SrTiO3 growth substrates, released, and relaminated onto silicon. The performance of the transferred devices is comparable to devices characterized on the oxide substrate, suggesting a viable route toward next-generation nonvolatile memories broadly integrable with different materials platforms.
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