Journal
NANO LETTERS
Volume 19, Issue 5, Pages 3057-3065Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b00441
Keywords
Ferroelectric field effect; orbital anisotropy; charge transfer; orbital hybridization; interfacial magnetic coupling; artificial multiferroic interface
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Funding
- Singapore National Research Foundation [NRF-CRP10-2012-02, NRF-IIP001-001]
- Singapore Ministry of Education [MOE T1 R-284-000-196-114, MOE 2018-T2-1-019]
- National 973 Program of China [2015CB654901]
- National Natural Science Foundation of China [61874158, 61674050, 11234011, 11474249]
- Young 1000 Talents Program of China
- National Key RAMP
- D Program of China [2017YFB0703100]
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Complex oxide thin-film heterostructures often exhibit magnetic properties different from those known for bulk constituents. This is due to the altered local structural and electronic environment at the interfaces, which affects the exchange coupling and magnetic ordering. The emergent magnetism at oxide interfaces can be controlled by ferroelectric polarization and has a strong effect on spin-dependent transport properties of oxide heterostructures, including magnetic and ferroelectric tunnel junctions. Here, using prototype La2/3Sr1/3MnO3/BaTiO3 heterostructures, we demonstrate that ferroelectric polarization of BaTiO3 controls the orbital hybridization and magnetism at heterointerfaces. We observe changes in the enhanced orbital occupancy and significant charge redistribution across the heterointerfaces, affecting the spin and orbital magnetic moments of the interfacial Mn and Ti atoms. Importantly, we find that the exchange coupling between Mn and Ti atoms across the interface is tuned by ferroelectric polarization from ferromagnetic to antiferromagnetic. Our findings provide a viable route to electrically control complex magnetic configurations at artificial multiferroic interfaces, taking a step toward low-power spintronics.
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