Journal
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume 30, Issue 9, Pages 8974-8979Publisher
SPRINGER
DOI: 10.1007/s10854-019-01225-z
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [51271036]
- National Key R&D Program of China [2016YFB0402701]
- Focus on research and development plan in Shandong province [2017GGX202008]
Ask authors/readers for more resources
Ta-doped Bi3.25La0.75Ti3O12 (BLTT) ferroelectric thin films were prepared via rf-magnetron sputtering with subsequent annealing treatments. The crystallization evolution and ferroelectric behavior of BLTT thin films were studied using in situ high temperature X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and piezoresponse force microscopy (PFM). With the increase of annealing temperatures, the thin films exhibited a preferred < 117 > crystalline orientation first and then weakly crystallizations to c-axis were obtained at high temperatures. SEM analysis reveals that the grain growth might be performed by melting and combining of particles in surface layer of original grains. PFM phase images reveal that less domain switching could be induced for BLTT films with larger grains.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available