Related references
Note: Only part of the references are listed.Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy
Qian Wang et al.
APPLIED SURFACE SCIENCE (2018)
Effect of annealing on chemical, structural and electrical properties of Au/Gd2O3/n-GaN heterostructure with a high-k rare-earth oxide interlayer
C. Venkata Prasad et al.
APPLIED SURFACE SCIENCE (2018)
Surface chemical states, electrical and carrier transport properties of Au/ZrO2/n-GaN MIS junction with a high-k ZrO2 as an insulating layer
V. Rajagopal Reddy et al.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS (2018)
Microstructural, electrical and frequency-dependent properties of Au/p-Cu2ZnSnS4/n-GaN heterojunction
V. Rajagopal Reddy et al.
JOURNAL OF COLLOID AND INTERFACE SCIENCE (2017)
Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers
Meijuan Zheng et al.
NANOSCALE RESEARCH LETTERS (2017)
Synthesis of rGO-Zn0.8Cd0.2S via in situ reduction of GO for the realization of a Schottky diode with low barrier height and highly enhanced photoresponsivity
Mrinmay Das et al.
NEW JOURNAL OF CHEMISTRY (2017)
Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers
Meijuan Zheng et al.
NANOSCALE RESEARCH LETTERS (2017)
Enhanced interfacial and electrical characteristics of 4H-SiC MOS capacitor with lanthanum silicate passivation interlayer
Qian Wang et al.
APPLIED SURFACE SCIENCE (2017)
Porous waxberry-like MnO2/La2O3 microspheres for high performance asymmetric supercapacitor
Yu Li et al.
ELECTROCHIMICA ACTA (2017)
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
V. Manjunath et al.
CURRENT APPLIED PHYSICS (2017)
Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer
C. Venkata Prasad et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2017)
La2O3 gate dielectrics for AlGaN/GaN HEMT
J. Chen et al.
MICROELECTRONICS RELIABILITY (2016)
Modification of electrical properties of Au/n-type InP Schottky diode with a high-k Ba0.6Sr0.4TiO3 interlayer
P. Prabhu Thapaswini et al.
SUPERLATTICES AND MICROSTRUCTURES (2016)
Microstructural, electrical and carrier transport properties of Au/NiO/n-GaN heterojunction with a nickel oxide interlayer
V. Rajagopal Reddy et al.
RSC ADVANCES (2016)
Rapid Thermal Annealing Effects on the Electrical, Structural and Morphological Properties of Yb/p-type InP Schottky Structure
V. Rajagopal Reddy et al.
ELECTRONIC MATERIALS LETTERS (2015)
Electrical properties and conduction mechanism of an organic-modified Au/NiPc/n-InP Schottky barrier diode
V. Rajagopal Reddy
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2014)
Recent progress of GaN power devices for automotive applications
Tetsu Kachi
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Electrical properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN metal-insulator-semiconductor (MIS) structure
V. Rajagopal Reddy et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2014)
Nitride-based metal-insulator-semiconductor ultraviolet sensors with a sputtered lanthanum oxide (La2O3) insulator
Po-Chang Chen et al.
SURFACE & COATINGS TECHNOLOGY (2013)
Performance of La2O3/InAlN/GaN metal-oxide-semiconductor high electron mobility transistors
Feng Qian et al.
CHINESE PHYSICS B (2012)
A study on MIS Schottky diode based hydrogen sensor using La2O3 as gate insulator
Gang Chen et al.
MICROELECTRONICS RELIABILITY (2012)
Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN
Jesse S. Jur et al.
APPLIED PHYSICS LETTERS (2011)
Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs
Hsien-Chin Chiu et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2010)
Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation
Chen Yang et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2009)
Effects of chemical treatment on barrier height and ideality factors of Au/GaN Schottky diodes
M. Diale et al.
PHYSICA B-CONDENSED MATTER (2009)
Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
Jinwook W. Chung et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Electrical transport characteristics of Sn/p-Si schottky contacts revealed from I-V-T and C-V-T measurements
S. Karatas et al.
PHYSICA B-CONDENSED MATTER (2007)
Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric
Chih-Hsiang Hsu et al.
JOURNAL OF APPLIED PHYSICS (2006)
Electrical properties of hybrid phthalocyanines thin films using gold and lead electrodes
AC Varghese et al.
EUROPEAN PHYSICAL JOURNAL B (2005)
Space-charge-limited currents in La2O3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing
YS Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Electrical conduction mechanisms of metal/La2O3/Si structure -: art. no. 103503
FC Chiu et al.
JOURNAL OF APPLIED PHYSICS (2005)
Characterization of La2O3 and Yb2O3 thin films for high-k gate insulator application
S Ohmi et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2003)
High breakdown voltage AlGaN-GaN Power-HEMT design and high current density switching behavior
W Saito et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2003)
Deposition of La2O3 films by direct liquid injection metallorganic chemical vapor deposition
SW Kang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2002)
Synthesis of wurtzite GaN films by reactive hot wall vapour deposition technique: fabrication of Au/GaN Schottky diode
B Deb et al.
MATERIALS CHEMISTRY AND PHYSICS (2002)
Electronic polarizability, optical basicity, and interaction parameter of La2O3 and related glasses
T Honma et al.
JOURNAL OF APPLIED PHYSICS (2002)
Share Paper
