Related references
Note: Only part of the references are listed.Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures
Bastien Bonef et al.
NANO LETTERS (2019)
Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy
Daehwan Jung et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2019)
Recombination activity of threading dislocations in GaInP influenced by growth temperature
K. Mukherjee et al.
JOURNAL OF APPLIED PHYSICS (2018)
How to control defect formation in monolithic III/V hetero-epitaxy on (100) Si? A critical review on current approaches
Bernardette Kunert et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon
Patrick G. Callahan et al.
PHYSICAL REVIEW MATERIALS (2018)
TrackMate: An open and extensible platform for single-particle tracking
Jean-Yves Tinevez et al.
METHODS (2017)
Metamorphic epitaxy for multijunction solar cells
Ryan M. France et al.
MRS BULLETIN (2016)
Electrically pumped continuous-wave III-V quantum dot lasers on silicon
Siming Chen et al.
NATURE PHOTONICS (2016)
The role of AsH3 partial pressure on anti-phase boundary in GaAs-on-Ge grown by MOCVD - Application to a 200 mm GaAs virtual substrate
David Kohen et al.
JOURNAL OF CRYSTAL GROWTH (2015)
High performance continuous wave 1.3 μm quantum dot lasers on silicon
Alan Y. Liu et al.
APPLIED PHYSICS LETTERS (2014)
Design rules for dislocation filters
T. Ward et al.
JOURNAL OF APPLIED PHYSICS (2014)
Determination of heteroepitaxial layer relaxation at growth temperature from room temperature X-ray reciprocal space maps
Tobias Roesener et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Three-Dimensional Electron Microscopy Simulation with the CASINO Monte Carlo Software
Hendrix Demers et al.
SCANNING (2011)
On Degradation Studies of III-V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation
Osamu Ueda
JAPANESE JOURNAL OF APPLIED PHYSICS (2010)
Nonradiative recombination at threading dislocations in n-type GaN:: Studied by cathodoluminescence and defect selective etching
M. Albrecht et al.
APPLIED PHYSICS LETTERS (2008)
Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition
Oluwamuyiwa O. Olubuyide et al.
THIN SOLID FILMS (2006)
Distortion and segregation in a dislocation core region at atomic resolution
X Xu et al.
PHYSICAL REVIEW LETTERS (2005)
Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers
ME Groenert et al.
JOURNAL OF APPLIED PHYSICS (2003)
Z-contrast imaging of dislocation cores at the GaAs/Si interface
S Lopatin et al.
APPLIED PHYSICS LETTERS (2002)
Realization of GaAs/AlGaAs lasers on Si substrates using epitaxial lateral overgrowth by metalorganic chemical vapor deposition
ZI Kazi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2001)
Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1-x/Si and Ge substrates
SM Ting et al.
JOURNAL OF APPLIED PHYSICS (2000)