Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 782, Issue -, Pages 772-779Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2018.12.230
Keywords
Chemical vapor deposition; MoS2; MoO3; Tellurium; Ammonium heptamolybdate; Raman
Categories
Funding
- University Grants Commission (UGC), India
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Control over thickness, size, and area of chemical vapor deposition (CVD) grown molybdenum disulfide (MoS2) flakes is crucial for device application. Herein, we report a quantitative comparison of CVD synthesis of MoS2 on SiO2/Si substrate using three different precursors viz., molybdenum trioxide (MoO3), ammonium heptamolybdate (AHM), and tellurium (Te). A three-step chemical reaction mechanism of evolution of MoS(2 )from MoO3 micro-crystals is proposed forMoO(3) precursor. Furthermore, a strategy based on growth temperature and ratio of amount of precursors is developed to systematically control thickness and area of MoS2 flakes. Our findings show that for large-sized crystalline monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temperature by similar to 250 degrees C. This study can be further used to fabricate MoS2 based high-performance electronic devices such as photodetectors, thin film transistors, and sensors. (C) 2018 Elsevier B.V. All rights reserved.
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