Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab088f
Keywords
-
Categories
Ask authors/readers for more resources
The effects of the N-2 gas flow ratio and the substrate self-bias of reactive sputtering on the polarity of AlN film on various planar sapphire substrates were investigated to obtain a non-polar oriented AlN film. On a c-plane sapphire substrate, substrate self-bias enhanced c-plane AlN growth and Al termination at the surface, as confirmed by X-ray diffraction (XRD) and time-of-flight low-energy atom scattering spectroscopy. In addition, the AlN film deposited at an N-2 gas: Ar sputtering gas ratio of 14% with substrate self-bias had high crystallinity with an XRD omega-rocking curve of 17 arcsec for the 0002 diffraction. In contrast, the AlN films on a- and r-plane sapphire substrates had semi-polar and non-polar plane orientations, respectively. However, on the a-plane sapphire substrate, the c-plane-orientated AlN phase was also observed, which was increased under substrate self-bias condition and an N-2 flow rate below 30%. Preferable conditions for non-polar AlN growth by reactive sputtering were non-substrate self-bias and a high N-2 flow rate of 30% or more. (c) 2019 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available