Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions

We perform an improved method of thermodynamic analysis for semipolar (11 (2) over bar2) and (1 (1) over bar 01) surfaces of GaN and AlN to elucidate the relationship between growth conditions and semipolar and polar surfaces during metalorganic vapor phase epitaxy (MOVPE). The calculations for H-2 carrier gas suggest that for both GaN and AlN the maximum temperature for growth on (11 (2) over bar2) surfaces is higher than that for growth on (0001) surfaces. On the other hand, the maximum temperature for growth on GaN(1 (1) over bar 01) surfaces is comparable to that for growth on GaN(0001) surfaces, while the maximum temperature for the growth on AlN(0001) surfaces is higher than that for growth on AlN(1 (1) over bar 01) surfaces. These results could be used to provide favorable conditions for growth of group-III nitrides along a semipolar orientation during MOVPE. (C) 2019 The Japan Society of Applied Physics