Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue -, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab0f15
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Funding
- Department of the Navy, Office of Naval Research [ONRG-NICOP-N62909-17-1-2004]
- Polish National Science Center [2017/25/B/ST5/02897]
- TEAM TECH program of the Foundation for Polish Science - European Union under the European Regional Development Fund [POIR.04.04.00-00-5CEB/17-00]
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Halide vapor phase epitaxy GaN crystal is examined, in terms of threading dislocations, by two experimental techniques: synchrotron radiation X-ray topography and defect selective etching. The obtained results are analyzed and compared. Three kinds of threading dislocations are found. Other defects in the crystal are also shown. A correlation between defects determined by the two experimental methods is presented and discussed. (C) 2019 The Japan Society of Applied Physics
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