Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 5, Pages 2307-2313Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2905636
Keywords
Breakdown voltage; ON-resistance; silicon carbide; switching energy loss; U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs)
Funding
- National Natural Science Foundation of China [61671368, 61172041, 61404103, 91123018]
- National Key Research and Development Program [2017YFB1200902-09]
- Basic Public Welfare Research Planning Project of Zhejiang Province [LGG19F040002]
- Fundamental Research Funds for the Central Universities
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In this paper, an improved 4H-SiC U-shaped trench-gate metal-oxide-semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance (R-ON) and switching energy loss is proposed. The novel structure features an added n-type region, which reduces ON-resistance of the device significantly while maintaining the breakdown voltage (V-BR). In addition, the gate of the improved structure is designed as a p-n junction to reduce the switching energy loss. Simulations by Sentaurus TCAD are carried out to reveal the working mechanism of this improved structure. For the static performance, the ON-resistance and the figure of merit (FOM = V-BR(2)/R-ON) of the optimized structure are improved by 40% and 44%, respectively, as compared to a conventional trench MOSFET without the added n-type region and modified gate. For the dynamic performance, the turn-on time (T-ON) and turn-off time (T-OFF) of the proposed structure are both shorter than that of the conventional structure, bringing a 43% and 30% reduction in turn-on energy loss and total switching energy loss (E-SW).
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