Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 5, Pages 2081-2085Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2905895
Keywords
Energy efficient; inversion layer charge model; near threshold; parameter extraction
Funding
- National Nature Science Foundation of China (NSFC) [61774078]
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Integrated circuits operated in the near-threshold region exhibit specific merit with high energy efficiency. A near-threshold model is highly required for the circuit design. In this paper, a near-threshold drain current model is proposed based on the surface inversion layer charge model for analyzing digital circuits. The short-channel effect in deep submicrometer is also included in the model. Moreover, the delay and energy parts based on the near-threshold drain current model are derived and integrated in the model. Two process design kits (PDKs) are used for parameter extraction to demonstrate the feasibility of the proposed model. The results show that the proposed model can be used for the near-threshold circuit calculation, with the benefit of high accuracy.
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