Journal
IEEE SENSORS JOURNAL
Volume 19, Issue 8, Pages 2931-2936Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSEN.2019.2891833
Keywords
Large area UV photodetector; optical sensor; SiC detector; Schottky diode
Funding
- regional project Sviluppo ed applicazione di tecnologie biosensoristiche in genomica [CIP 2014.IT.05.SFOP.014/3/10.4/9.2.10/0008, CUP G67B17000170009]
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In this paper, we present the extensive characterization of large-area silicon carbide-based UV sensors candidate for outdoors spectroscopic applications of gas or liquid. The proposed SiC Schottky devices exhibit a dark current density of 0.12 nA/cm(2) at 15 V, a 0.12-A/W responsivity at 300 nm, optimal visible blindness, and a switching time of similar to 190 ns. Effects of temperature on the sensor performance, of crucial interest for outdoors applications, are also examined in the range from -20 degrees C to 90 degrees C.
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