Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 5, Pages 818-821Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2908727
Keywords
Neuromorphic transistors; long-termplasticity; atomic layer deposition
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Funding
- National Science Foundation for Distinguished Young Scholars of China [61425020]
- National Natural Science Foundation of China [11674162]
- National Key R&D Program of China [2018FYA0305800]
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Indium-gallium-zinc-oxide (IGZO) photoelectric neuromorphic transistors with low-temperature atomic layer deposited Al2O3 gate dielectrics are fabricated. Dual-functional long-term plasticity, including long-term depression (LTD) and long-term potentiation (LTP), is emulated. The emulation of LTD is achieved by applying high-electrical pulse trains on the gate electrode. The LTP emulation is realized by applying light pulse trains on the IGZO channel layer. The operation mechanisms of the LTD and the LTP are discussed based on the electron/hole trapping in the Al2O3 gate dielectrics and the persistent photoconductivity of the IGZO channel layer.
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