Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 5, Pages 714-717Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2903641
Keywords
Ferroelectrics; hafnium zirconium oxide (HZO); FeFET; ZrO2 seed layer; memory window
Categories
Funding
- National Natural Science Foundation of China [51702273]
- Huxiang Young Talents Plan Support Project of Hunan Province [2018RS3087]
- Science and Technology Innovation Project of Hunan Province [2017XK2048]
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Hf0.5Zr0.5O2(HZO)-based ferroelectric-field-effect transistor (FeFET) with a ZrO2 seed layer was demonstrated. It was found that the ZrO2 seed layer could effectively improve the ferroelectric properties of the (hafnium zirconium oxide) HZO thin film. The remanent polarization and the coercive voltage of the metal-ferroelectric-insulator-semiconductor (MFIS) structure with the ZrO2 seed layer were larger than those without the seed layer. Moreover, the FeFET with the ZrO2 seed layer showed wider counterclockwise hysteresis loops in the transfer characteristics than that without the seed layer, achieving a large memory window of about 2.8 V. These results validate the advantages of the ZrO2 seed layer in promotion of FeFET performance and thus warrant further study.
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